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LND01 - Lateral N-Channel Depletion-Mode MOSFET

General Description

The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Key Features

  • Bi-directional.
  • Low on-resistance.
  • Low input capacitance.
  • Fast switching speeds.
  • High input impedance and high gain.
  • Low power drive requirement.
  • Ease of paralleling.

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Datasheet Details

Part number LND01
Manufacturer Supertex
File Size 261.79 KB
Description Lateral N-Channel Depletion-Mode MOSFET
Datasheet download datasheet LND01 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. Lateral N-Channel Depletion-Mode MOSFET LND01 Features ►► Bi-directional ►►Low on-resistance ►►Low input capacitance ►►Fast switching speeds ►►High input impedance and high gain ►►Low power drive requirement ►►Ease of paralleling Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Constant current sources ►► Analog switches General Description The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.