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VP3203 - P-Channel Vertical DMOS FETs

General Description

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability Integral source-to-drain diode Applications This low

Key Features

  • General.

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Datasheet Details

Part number VP3203
Manufacturer Supertex Inc
File Size 701.11 KB
Description P-Channel Vertical DMOS FETs
Datasheet download datasheet VP3203 Datasheet

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Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►High input impedance and high gain ►►Excellent thermal stability ►►Integral source-to-drain diode Applications This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.