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VP2106 - P-Channel Vertical DMOS FETs

Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.

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Datasheet Details

Part number VP2106
Manufacturer Supertex Inc
File Size 629.76 KB
Description P-Channel Vertical DMOS FETs
Datasheet download datasheet VP2106 Datasheet

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Full PDF Text Transcription

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Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain Applications ►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
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