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VN3515L - N-Channel Enhancement-Mode Vertical DMOS FETs

Features

  • ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

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Datasheet Details

Part number VN3515L
Manufacturer Supertex Inc
File Size 441.95 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN3515L Datasheet
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Full PDF Text Transcription

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VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V RDS(ON) (max) 15Ω 12Ω VGS(th) (max) 1.8V 1.8V ID(ON) (min) 0.15A 0.15A Order Number / Package TO-92 VN3515L VN4012L Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process.
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