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VN11C - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices.

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Datasheet Details

Part number VN11C
Manufacturer Supertex Inc
File Size 234.35 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VN11C Datasheet

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4 "'-11 !iupertex inc. VN11C N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS 160V 200V RDS(ON) (max) 3Q 3Q IO(ON) (min) 2.0A 2.0A T0-3 VN1116N1 VN1120N1 Order Number I Package TO·39 TO·220 VN1116N2 VN1116N5 VN1120N2 VN1120N5 Dice VN1116ND VN1120ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Applications 0 Motor control 0 Converters 0 Amplifiers 0 Switches o Power supply circuits o Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.