Datasheet4U Logo Datasheet4U.com

VN10KN3 - N-Channel Enhancement-Mode Vertical DMOS FETs

Datasheet Summary

Features

  • ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

📥 Download Datasheet

Datasheet preview – VN10KN3

Datasheet Details

Part number VN10KN3
Manufacturer Supertex Inc
File Size 454.61 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN10KN3 Datasheet
Additional preview pages of the VN10KN3 datasheet.

📁 Similar Datasheet

  • VN10KN3 - N-Channel Enhancement Mode D-MOS Power FETs (Topaz Semiconductor)
  • VN10KN3 - N-Channel Enhancement Mode D-MOS Power FETs (Telcom Semiconductor)
  • VN10KN9 - N-Channel Enhancement Mode Vertical D-MOS FETs (Supertex)
  • VN10K - N-Channel Vertical DMOS FET (Microchip)
  • VN10K - N-Channel MOSFET (TT)
  • VN10K-TO18 - N-Channel MOSFET (Seme LAB)
  • VN10KE - N-Channel Enhancement-Mode MOS Transistors (Siliconix)
  • VN10KE - N-Channel Enhancement-Mode MOS Transistors (Vishay Telefunken)
  • VN10KM - N-Channel Enhancement-Mode MOS Transistors (Siliconix)
  • VN10KM - N-Channel Enhancement-Mode MOS Transistors (Vishay Telefunken)
Other Datasheets by Supertex Inc
  • VN10K - N-Channel Enhancement-Mode Vertical DMOS FETs
  • VN1106N1 - N-Channel Enhancement-Mode Vertical DMOS Power FETs
  • VN1106N2 - N-Channel Enhancement-Mode Vertical DMOS Power FETs
  • VN1106N5 - N-Channel Enhancement-Mode Vertical DMOS Power FETs
  • VN1106ND - N-Channel Enhancement-Mode Vertical DMOS Power FETs
  • VN1110N1 - N-Channel Enhancement-Mode Vertical DMOS Power FETs
  • VN1110N2 - N-Channel Enhancement-Mode Vertical DMOS Power FETs
  • VN1110N5 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Full PDF Text Transcription

Click to expand full text
VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS / BVDGS 60V RDS(ON) (max) 5.0Ω ID(ON) (min) 0.75A Order Number / Package TO-92 VN10KN3 Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
Published: |