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SSW60R043SFD2 - 600V N-Channel Super-Junction MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Multi-Epi process SJ-FET.
  • Fast-Recovery body diode.
  • Extremely Low Reverse Recovery Charge.
  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 36mΩ.
  • Ultra Low Gate Charge (typ. Qg = 140nC).
  • 100% avalanche tested SSW60R043SFD2 TO-247 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Sin.

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Datasheet Details

Part number SSW60R043SFD2
Manufacturer Super Semiconductor
File Size 669.85 KB
Description 600V N-Channel Super-Junction MOSFET
Datasheet download datasheet SSW60R043SFD2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET Gen-Ⅱ With Fast-Recovery SS*60R043SFD2 Rev. 1.1 Sep. 2022 www.supersemi.com.cn SSW60R043SFD2 600V N-Channel Super-Junction MOSFET Gen-Ⅱ With Fast-Recovery Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.