SST65R190S3 - 650V N-Channel Super-Junction MOSFET

Product Overview

Datasheet Details

Part number	SST65R190S3
Manufacturer	Super Semiconductor
File Size	633.65 KB
Description	650V N-Channel Super-Junction MOSFET
Datasheet	SST65R190S3 Datasheet
Additional preview pages of the SST65R190S3 datasheet.

Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
700V @TJ = 150 ℃.
Typ. RDS(on) = 160mΩ.
Ultra Low Gate Charge (typ. Qg = 29nC).
100% avalanche tested.
Integrated Zener diode for high ESD robustness (>2kV HBM) SST65R190S3 TO-252 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalan.

📁 Similar Datasheet

SST65P542R - Remote Controller MCU (Silicon Storage Technology)
SST6301K - N-Channel Enhancement Mode Power MosFET (SeCoS)
SST6601 - N And P-Channel Enhancement Mode Power MOSFET (SeCoS)
SST6601-C - N And P-Channel Enhancement Mode Power MOSFET (SeCoS)
SST6838 - NPN General Purpose Transistor (Rohm)
SST6839 - PNP General Purpose Transistor (Rohm)
SST6908 - N-Channel JFET (Siliconix)
SST6909 - N-Channel JFET (Siliconix)

Other Datasheets by Super Semiconductor

SST60R280SFD - 600V N-Channel Super-Junction MOSFET

Published: Jul 19, 2025 |