Datasheet4U Logo Datasheet4U.com

SST65R190S3 - 650V N-Channel Super-Junction MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Multi-Epi process SJ-FET.
  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 160mΩ.
  • Ultra Low Gate Charge (typ. Qg = 29nC).
  • 100% avalanche tested.
  • Integrated Zener diode for high ESD robustness (>2kV HBM) SST65R190S3 TO-252 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalan.

📥 Download Datasheet

Datasheet Details

Part number SST65R190S3
Manufacturer Super Semiconductor
File Size 633.65 KB
Description 650V N-Channel Super-Junction MOSFET
Datasheet download datasheet SST65R190S3 Datasheet

Other Datasheets by Super Semiconductor

Part Number Description
SST60R280SFD 600V N-Channel Super-Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅲ SST65R190S3 Rev. 1.2 Feb. 2022 www.supersemi.com.cn SST65R190S3 650V N-Channel Super-Junction MOSFET Gen-Ⅲ SST65R190S3 650V N-Channel Super-Junction MOSFET Gen-Ⅲ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.