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SSB90R240S2 - 900V N-Channel Super-Junction MOSFET

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • Multi-Epi process SJ-FET.
  • 950V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.205Ω.
  • Ultra Low Gate Charge (typ. Qg = 41nC).
  • 100% avalanche tested.
  • Integrated Zener diode for high ESD robustness(>2kV HBM) SSB90R240S2 SSW90R240S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanc.

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Datasheet Details

Part number SSB90R240S2
Manufacturer Super Semiconductor
File Size 973.31 KB
Description 900V N-Channel Super-Junction MOSFET
Datasheet download datasheet SSB90R240S2 Datasheet

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Full PDF Text Transcription

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 900V Super Junction Power MOSFET Gen-Ⅱ SS*90R240S2 Rev. 1.0 Dec. 2022 www.supersemi.com.cn SSB90R240S2/SSW90R240S2 900V N-Channel Super-Junction MOSFET Gen-Ⅱ SSB90R240S2/SSW90R240S2 900V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
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