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SSB80R380S - 800V N-Channel MOSFET

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • Multi-Epi process SJ-FET.
  • 850V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.36Ω.
  • Ultra Low Gate Charge (typ. Qg = 17.2nC).
  • 100% avalanche tested SSB80R380S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed VGSS EAS IAS dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche current, repetitive or not-repetitive (pulse width limited by T.

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Datasheet Details

Part number SSB80R380S
Manufacturer Super Semiconductor
File Size 819.16 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet SSB80R380S Datasheet

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Full PDF Text Transcription

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power MOSFET SSB80R380S Rev. 1.2 Jun. 2022 www.supersemi.com.cn SSB80R380S 800V N-Channel MOSFET SSB80R380S 800V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. September, 2013 SJ-FET Features • Multi-Epi process SJ-FET • 850V @TJ = 150 ℃ • Typ.
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