Datasheet Details
| Part number | SGB100N042 |
|---|---|
| Manufacturer | Super Semiconductor |
| File Size | 513.55 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 SGB100N042 Datasheet
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Description
The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge.
Features
- VDS 100V.
- ID (at Vgs=10V) 120A.
- Typ. RDS(on) (at Vgs=10V) 3.7mΩ.
- Low Gate Charge (typ. Qg = 71nC).
- 100% avalanche tested SGB100N042 SGP100N042 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Continuous Drain Current - TC = 25℃ - TC = 100℃ Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pulse, L=1mH (Note 5) Power Diss.