STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STP4435 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 591.22 KB |
| Description | MOSFET |
| Datasheet |
 STP4435 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STP4435 | -30V P-Channel Enhancement Mode MOSFET | Semtron |
| STP4435M | Single P-Channel MOSFET | Semtron |
| STP4403 | P-Channel Enhancement Mode MOSFET | STANSON |
| STP4407 | P-Channel Enhancement Mode MOSFET | Semtron |
| STP4407 | P-Channel Enhancement Mode MOSFET | STANSON |
| Part Number | Description |
|---|---|
| STP413D | P-Channel Enhancement Mode MOSFET |
| STP4189D | MOSFET |
| STP4925 | Dual P-Channel Enhancement Mode MOSFET |
| STP1013 | MOSFET |
| STP3052D | MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
