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STN4946
Dual N Channel Enhancement Mode MOSFET
12A
DESCRIPTION
The STN4946 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer Li-ion Battery , power management and other battery powered circuits where high-side switching .
PIN CONFIGURATION SOP-8
FEATURE
� 60V/12A, RDS(ON) = 44mΩ (Typ.) @VGS = 10V
� 60V/8.0A, RDS(ON) =50mΩ @VGS = 4.
STN4946 Datasheet
