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STN4426 - MOSFET

Description

STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN4426
Manufacturer Stanson Technology
File Size 356.33 KB
Description MOSFET
Datasheet download datasheet STN4426 Datasheet

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Full PDF Text Transcription

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STN4426 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 20V/8.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 4.5V � 20V/7.0A, RDS(ON) = 36mΩ @VGS = 2.5V � 20V/3.0A, RDS(ON) = 42mΩ @VGS = 1.
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