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SPA-1218 - Power Amp

Description

Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

Features

  • On-chip Active Bias Control.
  • Patented High Reliability GaAsHBT Technology.
  • High Linearity Performance: +48dBm OIP3 Typ.
  • Surface-Mountable Plastic Package.

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Datasheet Details

Part number SPA-1218
Manufacturer Stanford Microdevices
File Size 236.42 KB
Description Power Amp
Datasheet download datasheet SPA-1218 Datasheet

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Full PDF Text Transcription

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Preliminary Product Description Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1950 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-1218 1960 MHz 1 Watt Power Amp with Active Bias VCC VBIAS RFIN www.DataSheet4U.
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