SSG5N20CD - Dual N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

( m £[ ) Max RDS(ON) Super high dense cell design for low RDS(ON). 30 @ VGS = 4.0V 40 @ VGS = 2.5V Rugged and reliable. Surface Mount Package. ( 1 ) D1 D2( 8 ) TSSOP 1 2 3 4 8 7 6 5 (TOP VIEW) ( 4 ) G1 G2( 5 ) S2 ( 6,7 ) ( 2,3 )S1.

South Sea Semiconductor

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Datasheet Details

Part number	SSG5N20CD
Manufacturer	South Sea Semiconductor
File Size	511.51 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	SSG5N20CD Datasheet
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South Sea Semiconductor SSS ID 5A SSG5N20CD Jan. 2005 ver 1.1 Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY VDSS 20V FEATURES ( m £[ ) Max RDS(ON) Super high dense cell design for low RDS(ON). 30 @ VGS = 4.0V 40 @ VGS = 2.5V Rugged and reliable. Surface Mount Package. ( 1 ) D1 D2( 8 ) TSSOP 1 2 3 4 8 7 6 5 (TOP VIEW) ( 4 ) G1 G2( 5 ) S2 ( 6,7 ) ( 2,3 )S1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TC=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 10 5 25 1.

Published: Sep 14, 2014 |