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CXG1213XR - High Power DPDT Switch

Description

This CXG1213XR can be used in wireless communication systems, for example, W-CDMA handsets.

The IC has on-chip logic for operation with 2 CMOS control inputs.

The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit.

Features

  • ‹ Low insertion loss ‹ 2 CMOS compatible control Package Small package size: 12-pin XQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C).
  • Bias voltage.
  • Control voltage.
  • Operating temperature.
  • Storage temperature VDD Vctl Topr Tstg 7 5.
  • 35 to +85.
  • 65 to +150 V V °C °C GaAs MMICs are ESD sensitive devices. Special handing precautions are required. Sony reserves the right to change products and specifications without prior notice. This informat.

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www.DataSheet4U.com High Power DPDT Switch with Logic Control CXG1213XR Description This CXG1213XR can be used in wireless communication systems, for example, W-CDMA handsets. The IC has on-chip logic for operation with 2 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. (Applications: Antenna switch for cellular handsets, dual-band W-CDMA) Features ‹ Low insertion loss ‹ 2 CMOS compatible control Package Small package size: 12-pin XQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C) Š Bias voltage Š Control voltage Š Operating temperature Š Storage temperature VDD Vctl Topr Tstg 7 5 –35 to +85 –65 to +150 V V °C °C GaAs MMICs are ESD sensitive devices.Special handing precautions are required.
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