Datasheet4U Logo Datasheet4U.com

CXK5V8257BYM-10LL - 32768-word X 8-bit High Speed CMOS Static RAM

Description

The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits.

A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs).

Features

  • Single +3.3V supply: 3.3V ±0.3V.
  • Directly LVTTL compatible: All inputs and outputs.
  • Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max. ) -10LL 100ns (Max. ).
  • Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max. ).
  • Low power data retention: 2.0V (Min. ).
  • Available in many packages CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5V8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Si.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CXK5V8512TM High Speed CMOS Static RAM Sony
CXK541000J High Speed CMOS Static RAM Sony
CXK541020J High Speed CMOS Static RAM Sony
CXK5416P High Speed CMOS Static RAM Sony
CXK54256P High Speed CMOS Static RAM Sony

Other Datasheets by Sony Semiconductor Solutions

Part Number Description
CXK5V8257BYM-70LL 32768-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BYM 32768-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BM 32768-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BM-10LL 32768-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BM-70LL 32768-word X 8-bit High Speed CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs). And special feature are, low power consumption, high speed and broad package line-up. The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Single +3.3V supply: 3.3V ±0.3V • Directly LVTTL compatible: All inputs and outputs • Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max.
Published: |