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CXK591000TM - 131/072-word X 9-bit High Speed CMOS Static RAM

Description

The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed.

Features

  • Fast access time CXK591000TM/YM/M (Access time) -55LL 55ns (Max. ) -70LL 70ns (Max. ) -10LL 100ns (Max. ).
  • Low standby current CXK591000TM/YM/M -55LL/70LL/10LL 24µA (Max. ).
  • Low data retention current CXK591000TM/YM/M -55LL/70LL/10LL 14µA (Max. ).
  • Single +5V supply: 5V ± 10%.
  • Low voltage date retention: 2.0V (Min. ).
  • Broad package line-up CXK591000TM/YM 8mm × 20mm 32 pin TSOP Package CXK591000M 525mil 32 pin SOP Package Function 131072 word × 9 b.

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CXK591000M 131/072-word X 9-bit High Speed CMOS Static RAM
CXK591000YM High Speed CMOS Static RAM
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Full PDF Text Transcription (Reference)

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CXK591000TM/YM/M -55LL/70LL/10LL 131,072-word × 9-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000TM/YM/M is a suitable RAM for portable equipment with battery back up and parity bit. Features • Fast access time CXK591000TM/YM/M (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current CXK591000TM/YM/M -55LL/70LL/10LL 24µA (Max.) • Low data retention current CXK591000TM/YM/M -55LL/70LL/10LL 14µA (Max.
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