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CXK58512M - 65536-word X 8-bit High Speed CMOS Static RAM

Description

The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption, high speed.

Features

  • Fast access time (Access time) -55LL 55ns (Max. ) -70LL 70ns (Max. ) -10LL 100ns (Max. ).
  • Low standby current 10µA (Max. ).
  • Low data retention current 6µA (Max. ).
  • Single +5V supply: +5V ± 10%.
  • Low voltage data retention: 2.0V (Min. ).
  • Broad package line-up CXK58512TM 8mm × 20mm 32 pin TSOP package CXK58512M 525mil 32 pin SOP Package Function 65536-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK58512TM 32 pin TSOP (Plastic) CXK58512M 32.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CXK58512TM/M -55LL/70LL/10LL ∗ 65536-word × 8-bit High Speed CMOS Static RAM ∗Under For the availability of this product, please contact the sales office. development Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable RAM for portable equipment with battery back up. Features • Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current 10µA (Max.) • Low data retention current 6µA (Max.) • Single +5V supply: +5V ± 10% • Low voltage data retention: 2.0V (Min.
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