Datasheet4U Logo Datasheet4U.com

CXG1030N - Power Amplifier

Description

The CXG1030N is a power amplifier for PHS.

This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.

Features

  • Output power 21 dBm.
  • Positive power supply 3.0 V.
  • Low current consumption 170 mA.
  • High power gain 39 dB Typ.
  • Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C).
  • Supply voltage VDD 6 V.
  • Voltage between gate and source Vgs0 1.5 V.
  • Drain current IDD 500 mA.
  • Power dissipation PD 3 W.
  • Channel temperature Tch 175 °C.
  • Operating temperature.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CXG1100TN High Power DPDT Switch Sony
CXG1115ER Dual-band Low Noise Amplifier/Mixer Sony
CXG1172UR JPHEMT High Power DPDT Switch Sony
CXG1173UR High Power SPDT Switch Sony
CXG1175UR High Power DPDT Switch SONY

Other Datasheets by Sony Semiconductor Solutions

Part Number Description
CXG1034TN Receiving Mixer
CXG1039TN High Isolation Absorptive SPDT Switch MMIC
CXG1006N GSM900/1800/1900 SPDT TX/RX Switch
CXG1008N High Isolation SPDT Switch
CXG1009TN High Isolation SPDT Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXG1030N Power Amplifier for PHS Description The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply 3.0 V • Low current consumption 170 mA • High power gain 39 dB Typ. • Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VDD 6 V • Voltage between gate and source Vgs0 1.5 V • Drain current IDD 500 mA • Power dissipation PD 3 W • Channel temperature Tch 175 °C • Operating temperature Top –35 to +85 °C • Storage temperature Tstg –65 to +150 °C Electrical Characteristics VDD=3.0 V, VCTL=2.0 V, f=1.
Published: |