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SXT-289 - Medium Power GaAs HBT Amplifier

Description

Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

Features

  • Patented High Reliability GaAs HBT Technology.
  • High Output 3rd Order Intercept : +42 dBm typ.
  • at 2450 MHz Surface-Mountable Power Plastic Package IP3 P1dB Gain.

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Datasheet Details

Part number SXT-289
Manufacturer Sirenza Microdevices
File Size 330.00 KB
Description Medium Power GaAs HBT Amplifier
Datasheet download datasheet SXT-289 Datasheet

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Product Description Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 www.DataSheet4U.
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