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SBW-5089 - InGaP/GaAs HBT MMIC Amplifier

Description

The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier.

A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance.

Features

  • Available in Lead Free, RoHS Compliant green package ( Z Suffix ).
  • 50 Ohm Cascadable Gain Block.
  • Wideband Flat Gain to 3 GHz: +/-1.4dB.
  • P1dB = 13.4 @ 6 GHz.
  • Input / Output VSWR < 2:3 to 8 GHz.
  • Patented Thermal Design.
  • Single Voltage Supply Operation Gain (dB) Return Loss (dB) 15 -10 ORL 10 -15 IRL 5 -20 0 -25 0 1 2 3 4 5 6 7 8 Frequency (GHz).

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Datasheet Details

Part number SBW-5089
Manufacturer Sirenza Microdevices
File Size 0.96 MB
Description InGaP/GaAs HBT MMIC Amplifier
Datasheet download datasheet SBW-5089 Datasheet

Full PDF Text Transcription

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SBW-5089 Product Description The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
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