SDT200 - Thyristor-Diode Modules

Datasheet Summary

Features

International standard package.
Direct copper bonded Al2O3-ceramic base plate.
Planar passivated chips.
Isolation voltage 3600 V~.

Sirectifier

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Datasheet Details

Part number	SDT200
Manufacturer	Sirectifier
File Size	293.03 KB
Description	Thyristor-Diode Modules
Datasheet	SDT200 Datasheet
Additional preview pages of the SDT200 datasheet.

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Full PDF Text Transcription

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STD/SDT200 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V STD/SDT200GK08 900 STD/SDT200GK12 1300 STD/SDT200GK14 1500 STD/SDT200GK16 1700 STD/SDT200GK18 1900 VRRM VDRM V 800 1200 1400 1600 1800 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=1A diG/dt=1A/us Test Conditions Maximum Ratings 314 200 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=750A 8000 8500 7000 7600 38000 34000 30000 27000 250 800 A i dt 2 A2s (di/dt)cr A/us non repetitive, IT=200A 1000 120 60 20 10 -40...

Published: Nov 18, 2013 |