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SM3383EHQG - Dual N-Channel MOSFET

General Description

G2S2S2S2 G1D1D1D1 S1/D2 D1 DFN3x3E-8_EP2 D1 (2)(3) (4) G1 (1) G2 (8) S1/D2 S2 (5)(6)(7) N-Channel MOSFET Ordering and Marking Information SM3383EH Assembly Material Handling Code Temperature Range Package Code SM SM3383EH QG : 3383E XXXXX Package Code QG : DFN3x3E-8_EP2 Operating Junct

Key Features

  • Channel 1 30V/14A, RDS(ON) = 10.8mW (max. ) @ VGS = 10V RDS(ON) = 16.9mW (max. ) @ VGS = 4.5V.
  • Channel 2 30V/24A, RDS(ON) = 7.2mW (max. ) @ VGS = 10V RDS(ON) = 12.3mW (max. ) @ VGS = 4.5V.
  • 100% UIS Tested.
  • Reliable and Rugged.
  • Lead Free Available (RoHS Compliant).

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Datasheet Details

Part number SM3383EHQG
Manufacturer Sinopower
File Size 298.38 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SM3383EHQG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SM3383EHQG ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 30V/14A, RDS(ON) = 10.8mW (max.) @ VGS = 10V RDS(ON) = 16.9mW (max.) @ VGS = 4.5V · Channel 2 30V/24A, RDS(ON) = 7.2mW (max.) @ VGS = 10V RDS(ON) = 12.3mW (max.) @ VGS = 4.5V · 100% UIS Tested · Reliable and Rugged · Lead Free Available (RoHS Compliant) Applications · Power Management in Desktop Computer or DC/DC Converters.