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SE150100 - N-Channel MOSFET

Download the SE150100 datasheet PDF. This datasheet also covers the SE150100-Sino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations See Diagram below F

Features

  • For a single MOSFET.
  • VDS = 150V.
  • RDS(ON) = 9.8mΩ @ VGS=10V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Rating 150 ±20 100 390 1100 370 -55 to 175 Units V V A mJ W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE150100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Sym.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SE150100-Sino-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SE150100
Manufacturer Sino-IC
File Size 408.73 KB
Description N-Channel MOSFET
Datasheet download datasheet SE150100 Datasheet

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Full PDF Text Transcription

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SE150100 N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Features For a single MOSFET  VDS = 150V  RDS(ON) = 9.8mΩ @ VGS=10V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Rating 150 ±20 100 390 1100 370 -55 to 175 Units V V A mJ W ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1.
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