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Product Summary
V(BR)DSS 40V
RDS(on)TYP 11mΩ@10V 14mΩ@4.5V
ID 22A
SP40N11DNJ
40V N-Channel MOSFET
Feature
High power and current handing capability Lead free product is acquired Surface mount package
Package
Circuit diagram
PDFN3X3-8L
Marking
40N11D =Device Code
*
=Month Code
Ver-1.1, 2023/10
Shanghai Siliup Semiconductor Technology Co. Ltd.
1
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Single Pulse Avalanche Energy1
EAS
Thermal Resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range
RθJA TJ,TSTG
SP40N11DNJ
40V N-Channel MOSFET
Limit 40 ±20 22 88 26 20 4.