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Product Summary
V(BR)DSS -30V
RDS(on)TYP 6.5mΩ@-10V 10.5mΩ@-4.5V
ID -50A
SP30P06DNK
30V Dual P-Channel MOSFET
Feature
High switching speed Low Gate Charge High density cell design for ultra low Rdson 100% Single Pulse avalanche energy Test
Application
Load Switching DC-DC
Package
Circuit diagram
PDFN5X6-8L
Marking
30P06D =Device Code
*
=Month Code
Ver-1.0, 2023/12
Shanghai Siliup Semiconductor Technology Co. Ltd.
SP30P06DNK Datasheet
