SSFM2506 - MOSFET

Description

It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time.

Features

Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

Silikron

📥 Download Datasheet

Datasheet Details

Part number	SSFM2506
Manufacturer	Silikron
File Size	406.57 KB
Description	MOSFET
Datasheet	SSFM2506 Datasheet

📁 Similar Datasheet

SSF-LXH100GD - LED (Lumex)
SSF-LXH100GD-01 - LED (Lumex)
SSF-LXH100HGW - LED (Lumex)
SSF-LXH100xx - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF-LXH2100xx - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF-LXH400 - PC-TYPE/STACKABLE LED LAMP (Lumex Opto Components)
SSF-LXH400GD - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF-LXH400xx - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF02N15 - 150V N-Channel MOSFET (GOOD-ARK)
SSF1016 - Power switching application (Silikron Semiconductor Co)

Other Datasheets by Silikron

SSFM1022 - MOSFET
SSFM3008 - MOSFET
SSFM3008H1 - MOSFET
SSFM3008L - MOSFET
SSFM8005 - MOSFET
SSF0115 - MOSFET
SSF1006 - MOSFET
SSF1006A - MOSFET

Full PDF Text Transcription

Click to expand full text

Main Product Characteristics: VDSS 25V RDS(on) 4.1mohm(typ.) ID 60A TO-252 (D-PAK) Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSFM2506 Marking and pin Schematic diagram Assignment Description: It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications.

Published: Jun 28, 2017 |