Datasheet4U Logo Datasheet4U.com

SSF2300 - MOSFET

Datasheet Summary

Description

The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = 2.4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 55mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – SSF2300

Datasheet Details

Part number SSF2300
Manufacturer Silikron
File Size 312.19 KB
Description MOSFET
Datasheet download datasheet SSF2300 Datasheet
Additional preview pages of the SSF2300 datasheet.

📁 Similar Datasheet

  • SSF2300 - 20V N-Channel MOSFET (GOOD-ARK)
  • SSF2300A - Battery protection (Silikron Semiconductor Co)
  • SSF2300B - Battery protection (Silikron Semiconductor Co)
  • SSF2301 - PWM applications (Silikron Semiconductor Co)
  • SSF2301B - PWM applications (Silikron Semiconductor Co)
  • SSF2301B - 20V P-Channel MOSFET (GOOD-ARK)
  • SSF2301C - PWM applications (Silikron Semiconductor Co)
  • SSF2302 - Battery protection (Silikron Semiconductor Co)
  • SSF2302 - N-Channel MOSFET (VBsemi)
  • SSF2305 - MOSFET (Silikron Semiconductor)
Other Datasheets by Silikron

Full PDF Text Transcription

Click to expand full text
SSF2300 DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 55mΩ @ VGS=4.
Published: |