Click to expand full text
Main Product Characteristics:
VDSS RDS(on)
ID
100V 5Ω(typ.) 0.17A ①
D
S G
SOT-23
SSF13R6
Schematic Diagram
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.