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SSF13N50F - MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Features

  • TO220F.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet preview – SSF13N50F

Datasheet Details

Part number SSF13N50F
Manufacturer Silikron
File Size 505.97 KB
Description MOSFET
Datasheet download datasheet SSF13N50F Datasheet
Additional preview pages of the SSF13N50F datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: VDSS RDS(on) 500V 0.41Ω(typ.) ID 13A Features and Benefits: TO220F  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF13N50F Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
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