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Main Product Characteristics:
VDSS RDS(on)
600V 0.55Ω (typ.)
ID 12A
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
TO220F
SSF12N60F
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSF12N60F Datasheet
