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Main Product Characteristics:
VDSS
-12V
RDS(on) 14.4 mΩ(typ.)
ID -12A
DFN2x2-6L Pin Assignment
SSF1221J2
Schematic diagram
Features and Benefits:
Advanced trench MOSFET process technology Special designed for battery charge, load
switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.