Datasheet4U Logo Datasheet4U.com

SSF1109 - MOSFET

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • TO220 .
  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Datasheet preview – SSF1109

Datasheet Details

Part number SSF1109
Manufacturer Silikron
File Size 320.72 KB
Description MOSFET
Datasheet download datasheet SSF1109 Datasheet
Additional preview pages of the SSF1109 datasheet.

📁 Similar Datasheet

  • SSF11NS60 - 600V N-Channel MOSFET (GOOD-ARK)
  • SSF11NS60D - N-Channel MOSFET (GOOD-ARK)
  • SSF11NS65 - 650V N-Channel MOSFET (GOOD-ARK)
  • SSF1016 - Power switching application (Silikron Semiconductor Co)
  • SSF1020 - Power switching application (Silikron Semiconductor Co)
  • SSF1020D - 100V N-Channel MOSFET (GOOD-ARK)
  • SSF1090 - N-Channel enhancement mode trench power MOSFET (Silikron Semiconductor)
  • SSF1090 - 100V N-Channel MOSFET (Good-Ark)
  • SSF10N60A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by Silikron

Full PDF Text Transcription

Click to expand full text
                                 Main Product Characteristics: VDSS 110V RDS(on) 6.7mohm(typ.) ID 130A Features and Benefits: TO220  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF1109  Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
Published: |