SMT006P88G1 - MOSFET

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

Silikron

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Datasheet Details

Part number	SMT006P88G1
Manufacturer	Silikron
File Size	375.96 KB
Description	MOSFET
Datasheet	SMT006P88G1 Datasheet
Additional preview pages of the SMT006P88G1 datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: VDSS -60V RDS(on) 90mΩ(typ) ID -5A SOT-23 SMT006P88G1 Pin Assignments Schematic Diagram Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Published: Sep 5, 2024 |