SMT004N19H1
Features and Benefits:
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Pin Assignments
Schematic Diagram
Description
:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TA = 25°C ID @ TA= 100°C IDM PD @TA = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current ① Continuous Drain Current ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. 6.3 4 25.2 1.83 40 ± 20 -55 to +150
Units
W V V °C
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