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Main Product Characteristics:
VDSS
-30V
RDS(on) 26.3mΩ (typ.)
ID
-5.8A
SOT23-3L
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SMT003P26G4
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SMT003P26G4 Datasheet
