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Main Product Characteristics:
VDSS
20V
RDS(on) 131mΩ(typ.)
ID
1A
SOT-23
Features and Benefits
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
SMT002NA4G1
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SMT002NA4G1 Datasheet
