Click to expand full text
Main Product Characteristics:
VDSS
20V
RDS(on) 12.3mΩ(typ.)
ID
7.2A
SOT-23
Features and Benefits
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
SMT002N13G1E
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SMT002N13G1E Datasheet
