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SMS006N09C1 - MOSFET

Datasheet Summary

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet preview – SMS006N09C1

Datasheet Details

Part number SMS006N09C1
Manufacturer Silikron
File Size 282.51 KB
Description MOSFET
Datasheet download datasheet SMS006N09C1 Datasheet
Additional preview pages of the SMS006N09C1 datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: VDSS 60V RDS(on) 8.8mΩ (typ.) ID 60A D S G TO-252 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SMS006N09C1 Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
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