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SMI120N32E2 - IGBT

Datasheet Summary

Features

  • TO - 247- 4L.
  • High blocking voltage with low on-resistance.
  • High speed switching,very low switching losses.
  • High blocking voltage with low on-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Temperature independent turn-off switching losses.

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Datasheet preview – SMI120N32E2

Datasheet Details

Part number SMI120N32E2
Manufacturer Silikron
File Size 1.98 MB
Description IGBT
Datasheet download datasheet SMI120N32E2 Datasheet
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Full PDF Text Transcription

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Main Product Characteristics: VDS 1200V ID 87A RDS(on) 32mΩ 1 234 Features and Benefits: TO - 247- 4L  High blocking voltage with low on-resistance  High speed switching,very low switching losses  High blocking voltage with low on-resistance  Fast intrinsic diode with low reverse recovery (Qrr)  Temperature independent turn-off switching losses Applications:  On-board charger/PFC  EV battery chargers  Booster/DC-DC converter  Switch mode power supplies Absolute Max Rating: Symbol VDS VGS,max VGS,op ID ID(puls) PD TJ TSTG TL Parameter Drain Source Voltage Gate Source Voltage,Absolute Maximum Values Gate Source Voltage,Recommended Operational Values Continuous Drain Current @TC = 25 °C Continuous Drain Current @TC = 100 °C Pulsed Drain Current,Pulse Width tP limite
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