Datasheet4U Logo Datasheet4U.com

SMG120N80E1 - IGBT

Datasheet Summary

Features

  • Trench FS technology offering.
  • High speed switching.
  • Low gate charge and VCE(sat).
  • High ruggedness, temperature stable behavior.
  • Maximum junction temperature 175°C TO - 247.

📥 Download Datasheet

Datasheet preview – SMG120N80E1

Datasheet Details

Part number SMG120N80E1
Manufacturer Silikron
File Size 246.77 KB
Description IGBT
Datasheet download datasheet SMG120N80E1 Datasheet
Additional preview pages of the SMG120N80E1 datasheet.

📁 Similar Datasheet

  • SMG12C60 - THYRISTOR (SanRex Corporation)
  • SMG12C60F - THYRISTOR (SanRex Corporation)
  • SMG12C60H - THYRISTOR (SanRex Corporation)
  • SMG1 - Voltage-Controlled Attenuator Module (Tyco Electronics)
  • SMG1 - Voltage-Controlled Attenuator Module (MA-COM)
  • SMG130 - 3-axis gyroscope (Bosch)
  • SMG1332E - N-Channel Enhancement Mode Power MosFET (SeCoS)
  • SMG1333 - P-Channel Enhancement Mode Power MosFET (SeCoS)
  • SMG138K - N-Channel Enhancement Mode Power MosFET (SeCoS)
  • SMG1553-xx - MILITARY/AEROSPACE PRODUCTS (Pulse)
Other Datasheets by Silikron

Full PDF Text Transcription

Click to expand full text
Main Product Characteristics: VCES 1200V IC 80A VCE(sat) 1.
Published: |