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SSPL7510 - N-Channel enhancement mode power field effect transistors

Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Features

  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSPL7510
Manufacturer Silikron Semiconductor
File Size 615.24 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSPL7510 Datasheet

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Full PDF Text Transcription

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Main Product Characteristics: VDSS RDS(on) ID 75V 9.5mΩ(typ.) 75A Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature TO220 SSPL7510 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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