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crSiliconix
~ incorporated
VNMA09
N-Channel Enhancement-Mode MOSFET
DESIGNED FOR:
• Switching
FEATURES
• High Speed for Military Applications (see VNDQ09 for Industrial Applications)
TYPE Single
PACKAGE
DEVICE
TO-205AD • JANTX2N6661
GEOMETRY DIAGRAM
0.012 (0.304)
0.010 (0.254)
T 0.077 (1.956)
Source Pad -+t--+--+
Gate Pad -H--I----
0.0094
(0.24)
0.0095
(0.241)
9mil-ll-
1'------
0.041 (1.041)
--.J-I
III
7-163
VNMA09
TYPICAL CHARACTERISTICS
Output Characteristics
2 !VGS = 10V
rr1.S
g'V 81V -
1.2 r
10
(A) 0.8
71V I
sv 5V-
4V 0.4
3V
o 2V o 20 40 SO 80 100
Vos (V)
a'r'Siliconix
~ incorporated
Ohmic Region Characteristics
VG = 10 V 7V/ ~I
0.8
1/ /
SV_l-
I/ V 1
VLV.....' jO.S TJ = 25°C '/
~
~ !--
5V .~
I=-
~
10 (A) 0.4
VA I.1:7/
./""""
4t - r-
~0.
VNMA09 Datasheet
