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VNDV40 - N-Channel Enhancement-Mode MOSFET

Features

  • High Breakdown> 400 V.
  • Low rDS(on) < 12 n TYPE Single.

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Datasheet Details

Part number VNDV40
Manufacturer Siliconix
File Size 240.37 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDV40 Datasheet

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Full PDF Text Transcription

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.:rSiliconix ~ incorporated VNDV40 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • High Breakdown> 400 V • Low rDS(on) < 12 n TYPE Single PACKAGE DEVICE TO-205AD • VN4012B TO-92 • VN3515L, VN4012L Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.005 (0.127) 0.007 (0.178) Source Pad 0.006 (0.152) 0.007 (0.178) 0.058 (1.47) ~1 0.053 (1.35) I • .. 7-153 VNDV40 TYPICAL CHARACTERISTICS Output Characteristics :J I I I I:::I 10 (A) 0.4 0.2 o TJ = 25°C o 100 200 300 Vos (V) 3.0 V 2.5 V 2.0 V 400 500 .-r-Siliconix ~ incorporatec Ohmic Region Characteristics 500 T~ = ~5ocl 14.0 1V _ ~400 31.0V~ ~VGS = 10 V -1..........~ 300 ~ ~ V" ~ ~ ~ fo"""" 10 (rnA) 200 100 - ~P': ~ 2.5 V ~~V F' ~ 2.
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