Click to expand full text
VNDS06
ICrSiliconix
~ incorporated
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
• Switching • Amplification
FEATURES n• Low rDS(on} < 10
• Low Cost • Surface Mount Package SOT-23
GEOMETRY DIAGRAM
TYPE Single
Quad
IPACKAGE
DEVICE
TO-206AC • VN10LE
TO-92
• 2N7000, 2N7008 VN0603L, VN0610LL VN2222LL
TO-237 SOT-23
• VN2222LM
• VN0603T, VN0605T 2N7002
14-Pin Plastic
• VQ1000J
14-Pin Dual-In-
Line
• VQ1000P
Chip
• Available as above specifications
Gate Pad 0.0041 (0.104) 0.0049 (0.124)
Source Pad 0.0041 (0.104) 0.0049 (0.124)
T 0.027 (0.686)
1
7-148
~Siliconix ~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
1.0
II- VG = 10 V
I0.8 /'" II.,.
O.S V-
'I10
(A) 0.4
7V
I
s~ _
I
5V
J
0.2
/
4V
.