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VN66AFD - N-Channel Enhancement-Mode MOS Transistors

Download the VN66AFD datasheet PDF. This datasheet also covers the VN66AD variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN66AD-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN66AFD
Manufacturer Siliconix
File Size 95.48 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN66AFD Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN66AD N-Channel Enhancement-Mode MOS Transistors
VN67AB N-Channel Enhancement-Mode MOS Transistors
VN67AD N-Channel Enhancement-Mode MOS Transistors
VN67AFD N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription

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fCTSiliconix .LJ!I incorporated VN66 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE VN66AD 60 3 1.7 TO-220 TO-220/TO-220SD TOP VIEW o VN66AFD 60 3 1.46 TO-220SD Performance Curves: VNDQ06 (See Section 7) TO-220 1 GATE 2 & TAB - DRAIN 3 SOURCE 123 TO-220SD 1 SOURCE 2 GATE 3 & TAB - DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) 2 PARAMETERS/TEST CONDITIONS SYMBOL VN66AD VN66AFD UNITS Drain-Source Voltage Gate-Source Voltage Vos 60 VGS ±30 60 V ±30 Tc= 25°C 1.7 Continuous Drain Current ID Tc = 100°C 1 1.46 0.92 A Pulsed Drain Current 1 IDM 3 3 Power Dissipation Tc= 25°C 20 Po Tc = 100°C 8 15 W 6 Operating Junction and Storage Temperature TJ.
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