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VN0808M - N-Channel Enhancement-Mode MOS Transistors

Download the VN0808M datasheet PDF. This datasheet also covers the VN0808L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN0808L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN0808M
Manufacturer Siliconix
File Size 96.29 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN0808M Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN0808L N-Channel Enhancement-Mode MOS Transistors
VN0300B N-Channel Enhancement-Mode MOS Transistors
VN0300L N-Channel Enhancement-Mode MOS Transistors
VN0300M N-Channel Enhancement-Mode MOS Transistors
VN0603L N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription

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flr]l""Siliconix ~ incorporated VN0808 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.(1 ) (A) PACKAGE VNOSOSL SO 4 0.30 TO-92 VNOSOSM SO 4 0.33 TO-237 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ09 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0808L VN0808M Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 Pulsed Drain Current 1. 2 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VOS VGS 10 10M Po TJ. Tstg h SO SO ±30 0.30 ±30 0.33 0.19 0.21 1.
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