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U311. For precise diagrams, and layout, please refer to the original PDF.
n-channel JFET designed for • • • • VHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage ............... -25 V Gate Cur...
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25°C) Gate-Drain or Gate-Source Voltage ............... -25 V Gate Current ............................... 10mA Total Device Dissipation (Derate 1.7 mWrC) ..... 300 mW Storage Temperature Range .............. -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ............. 300°C H Siliconix ----- Performance Curves NZB See Section 4 BENEFITS • High Power Gain 16 dB Typ @ 105 MHz, CommonGate 11 dB Typ @450 MHz, CommonGate • Low Noise Figure 1.5 dB Typ@ 105 MHz 2.